Publishing: December 2021 | Report Code: SE10332 | Available Format: PDF
North America leads the backside illumination (BSI), complementary metal oxide semiconductor (CMOS) image sensor market, due to several design and technological improvements in this technology. This has been driving its demand in sectors, such as consumer electronics, and automotive in the region. The Asia-Pacific BSI CMOS image sensor market is expected to grow at the highest rate, in the coming years, due to which, it is expected to become the largest market, in the coming years. One of the key reasons for high growth of Asia Pacific in this market is its swift transition, from analog to digital systems. Another major driver for BSI CMOS image sensor market in the region is increasing consumer expenditure on electronics products. The reducing prices of smartphones, along with consumers’ inclination towards high resolution camera enabled mobile phones, has increased the demand for BSI CMOS image sensors, in the region.
With the continuous improvements and innovations in CMOS imaging design, technology, and fabrication, the practical implementation issues concerning the CMOS image sensor designers have been solved. Previously, the inter-line transfer (ILT) CCD sensors were required for high-quality images, in many applications. However, improvement in the design of BSI CMOS image sensors, have led to much faster inspection systems, with the preferred image quality. Although, the integration of circuit designs, is used to optimize the tradeoffs between limiters. The CMOS imaging technology designers are also delivering products with performance, which is truly compelling for machine vision applications.
The BSI CMOS image sensor designing allows light to reach photo diodes on the sensor, in a simple way. The wiring inside BSI CMOS image sensor is moved behind the light receiving surface, to make the sensor more light sensitive, and produce less noise. Light falls on the ocular volume of photodiode in BSI CMOS technology, and removes the need for passing of light across the layers of metal interconnections. Backside positioning of lens enhances sensitivity, and absorption of light, as compared to conventional technologies, which further permits the formation of finer pixels images. BSI CMOS image sensors are widely used in the camera enabled mobile phones, owing to small size, less power consumption and higher speed of BSI CMOS image sensors, over CCD image sensors. The popularity of social networking has increased the demand for high end camera functions, in mobile phones, which is consequently increasing the demand in the BSI CMOS image sensor market.
BSI CMOS image sensors eliminate the bulk substrate in the devices to decrease diffusion component of dark current and electrical crosstalk. BSI CMOS image sensors have higher quantum efficiency, which in turn enhances the production of output images with similar signal to noise ratio (SNR). However BSI CMOS image sensors are mechanically weaker, due to wafer thinning, which results in more chances of breakage for a large BSI CMOS image sensor. One of the major disadvantages associated with BSI CMOS image sensor is its high cost, due to high efforts requirement in manufacturing BSI CMOS image sensor. Therefore, BSI CMOS image sensors are only used on small sensors, such as smartphone sensors, to increase the pixels by a significant amount.
Some of the competitors in BSI CMOS image sensor market are OmniVision Technologies Inc., Sony Corporation, Samsung Semiconductor, Inc., GalaxyCore Inc., ON Semiconductor Corporation, SK Hynix Inc., Himax Imaging Inc., Toshiba Corporation, and Panasonic Corporation.
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